Download PDFOpen PDF in browserOptimize BJT for Small Dimensions and High-Frequency Analysis6 pages•Published: August 5, 2017AbstractIn this paper, we have designed Bipolar junction transistor (BJT) structure for small dimensions that are (given by SCL Chandigarh) and high-frequency analysis. The material used is pure Si material no compounds such as SiGe, SiC is used. This transistor is examined by various effect of parameter variations such as doping, height, length through simulations. In this paper, we have optimized the small BJT at higher beta (β) 96.50 dB, and high- frequencies ft 8.64 GHz and fmax 21.51 GHz using pure Si material.Keyphrases: bipolar junction transistor, effect of parameter variations., rf parameters, scl, structure In: Ajitkumar Shukla, J. M. Patel, P. D. Solanki, K. B. Judal, R. K. Shukla, R. A. Thakkar, N. P. Gajjar, N. J. Kothari, Sukanta Saha, S. K. Joshi, Sanjay R. Joshi, Pranav Darji, Sanjay Dambhare, Bhupendra R. Parekh, P. M. George, Amit M. Trivedi, T. D. Pawar, Mehul B. Shah, Vinay J. Patel, Mehfuza S. Holia, Rashesh P. Mehta, Jagdish M. Rathod, Bhargav C. Goradiya and Dharita K. Patel (editors). ICRISET2017. International Conference on Research and Innovations in Science, Engineering and Technology. Selected Papers in Engineering, vol 1, pages 626-631.
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