GaAsSb Nanowires: a Study on the Effects of Space Charge Limited Conduction and In Situ Annealing

EasyChair Preprint 14379

Abstract

GaAsSb nanowires are emerging as a promising material for advanced optoelectronic and high-speed electronic applications due to their tunable bandgap and superior electronic properties. This study investigates the effects of Space Charge Limited Conduction (SCLC) and in situ annealing on the electrical and structural properties of GaAsSb nanowires. SCLC is a critical conduction mechanism in semiconductor devices, especially at high bias, where the current becomes limited by the space charge of the injected carriers. We explore how this phenomenon influences the electrical behavior of GaAsSb nanowires and how in situ annealing can modify these effects.

Using a combination of molecular beam epitaxy for nanowire synthesis and advanced characterization techniques, we analyze the structural and compositional integrity of the nanowires before and after annealing. The I-V characteristics are measured to determine the impact of SCLC on the current conduction, revealing the role of defect states and trap densities within the nanowires. In situ annealing is conducted to mitigate defects and enhance crystal quality, aiming to optimize the nanowires' performance.

Keyphrases: Defect reduction, GaAsSb Nanowires, In Situ Annealing, Space Charge Limited Conduction, crystalline quality, semiconductor nanowires

@booklet{EasyChair:14379,
  author    = {Docas Akinyele},
  title     = {GaAsSb Nanowires: a Study on the Effects of Space Charge Limited Conduction and In Situ Annealing},
  howpublished = {EasyChair Preprint 14379},
  year      = {EasyChair, 2024}}