A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration

EasyChair Preprint 7997

Abstract

Terahertz (THz) domain is quickly developing with various applications such as beam diagnostics at particle accelerators, spectroscopy, communications, space science, etc, however, often requiring fast intermediate frequency (IF) electronics. We present the design of a double mirror stub (DMS) based a planar broadband bias tee having an isolation port S31 with 14.45 GHz bandwidth below -10 dB and S33 with 13.1 GHz bandwidth above -2 dB. CST simulation and measured results are in very good agreement. The bias tee will be a part of a new generation of on-chip THz detectors based on zero-bias Schottky diode and high electron mobility field effect transistor (HEMT).

Keyphrases: Field Effect Transistor (FET), S-parameters, Schottky Diode (SD), bias tee, broadband THz detectors

@booklet{EasyChair:7997,
  author    = {Rahul Yadav and Sascha Preu and Andreas Penirschke},
  title     = {A Double Mirror Stub Design of Broadband Planar Bias Tee for System on Chip Integration},
  howpublished = {EasyChair Preprint 7997},
  year      = {EasyChair, 2022}}