The Impact of In Situ Annealing on the Electrical Properties of GaAsSb Nanowires

EasyChair Preprint 14381

Abstract

In situ annealing is a critical process in the fabrication of semiconductor nanowires, influencing their structural and electrical properties. This study investigates the impact of in situ annealing on GaAsSb nanowires, focusing on their electrical performance. GaAsSb nanowires were synthesized using a vapor-liquid-solid (VLS) method and subjected to varying annealing temperatures during growth. Electrical measurements, including current-voltage (I-V) characteristics and Hall effect studies, were performed to assess changes in conductivity, resistivity, carrier concentration, and mobility.

The results reveal that in situ annealing significantly affects the electrical properties of GaAsSb nanowires. Annealed samples exhibited improved conductivity and carrier mobility compared to non-annealed counterparts, attributed to enhanced crystallinity and reduced defects. These changes are linked to the annealing-induced modifications in the nanowire's structural integrity and compositional uniformity. The study highlights the potential of in situ annealing as a tool for optimizing the electrical performance of GaAsSb nanowires, with implications for their application in advanced semiconductor devices.

Keyphrases: GaAsSb Nanowires, In Situ Annealing, carrier mobility, electrical properties, quantum confinement

@booklet{EasyChair:14381,
  author    = {Docas Akinyele},
  title     = {The Impact of In Situ Annealing on the Electrical Properties of GaAsSb Nanowires},
  howpublished = {EasyChair Preprint 14381},
  year      = {EasyChair, 2024}}